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| Schottky Barrier Diodes (SBD) MA4S713 Silicon epitaxial planar type For switching circuits For wave detection circuit I Features * Small S-mini type 4-pin package * Two isolated elements contained in one package, allowing highdensity mounting * Flat lead type package, resulting in promotion of the actual mounting ratio and solderability with a high-speed mounter * Optimum for low-voltage rectification because of its low forward rise voltage (VF) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.0 0.1 1.3 0.1 Unit : mm 2.1 0.1 1.25 0.1 1 4 2 3 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Peak forward current Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR VRM IFM Rating 30 30 150 110 30 20 125 -55 to +125 C C 2 mA 1 Unit V V mA 0.7 0.1 1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Cathode 1 S-Mini Type Package (4-pin) Marking Symbol: M1N Internal Connection 4 3 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak), f = 30 MHz RL = 3.9 k, CL = 10 pF 1.5 1 Conditions Min Typ Max 1 0.4 1 Unit A V V pF ns Detection efficiency 65 0.3 0.05 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA4S713 IF V F 103 1.6 1.4 Schottky Barrier Diodes (SBD) VF Ta 103 IR VR 102 75C 25C 102 Forward current IF (mA) Forward voltage VF (V) Ta = 125C 10 - 20C 1.2 1.0 0.8 0.6 0.4 3 mA 0.2 1 mA Reverse current IR (A) Ta = 125C 10 75C IF = 30 mA 1 1 10-1 10-1 25C 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 -40 10-2 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 1 000 Ct VR 3.0 1 000 IF(surge) tW Ta = 25C Terminal capacitance Ct (pF) 100 2.5 Forward surge current IF(surge) (A) 300 tW 100 30 10 3 1 0.3 0.1 0.03 IF(surge) Reverse current IR (A) VR = 30 V 10 V 1V 2.0 10 1.5 1 1.0 0.1 0.5 0.01 -40 0 0 40 80 120 160 200 0 5 10 15 20 25 30 0.1 0.3 1 3 10 30 60 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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